Technical SPECs
The icon of high-end applications
- High thermal conductivity up to 90 W/(m·K)
- High thermal shock resistance up to 1000℃
- High vickers hardness up to 16GPa
- High bending strength up to 800MPa
- High fracture toughness up to 6~8 MPa·m¹/²
- High-temperature stability up to 1400℃
- High chemical stability in Acid-base environment
Silicon Nitride Substrate Manufacturer
As a reliable manufacturer of silicon nitride (Si3N4) ceramic substrates, we are committed to providing your core equipment with key components that are highly reliable, long-lasting, and lightweight through cutting-edge material and process innovations.
The Si3N4 substrate we supply can be shaped by tape casting and dry pressing with a dense ceramic body. All these Si3N4 ceramic substrates combine ideal mechanical properties, excellent thermal performance, good electrical, and superb chemical stability. They can be extensively used in IGBT modules for electric vehicles, photovoltaic inverters, 5G radio frequency devices, as well as high-temperature resistant liners for gas turbines and carriers for medical implants.
The silicon nitride substrate can be customized by internal via CNC machining, laser cutting, laser scribing and polishing. Whatever, it’s a pilot order, or bulk demand, it can be realized in a short term. If you would share with us your specifications, we will offer you an amazing solutions in 24 hours.
By Features
Our silicon nitride substrates are mainly produced based on customers’ customized requirements. Below are some representative products.
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Standard size is 140 x 190mm with optional thicknesses, 0.25mm, 0.32mm, and 0.50mm.
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It can obtain a flatter and smoother surface after fine grinding. The flatness can be 0.02mm.
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Polishing can eliminate the visual defects further and improve the surface performance.
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Different shapes and dimensions of Si3N4 sheets can be tailored using standard silicon nitride substrates.
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Machined Si3N4 SubstrateTo achieve precise dimensional tolerance and designated configurations through CNC machining.
The Overview of Silicon Nitride Substrate
Silicon nitride ceramic substrate, a high-tech material composed of nitrogen and silicon atoms, is designed for various extreme scenarios of high temperature, high pressure and high wear, especially for chips in electronics and electrical applications. It redefines the “reliable” with its distinct durability.
Core Strengths of Silicon Nitride Substrate
- The unparalleled thermal shock resistance than others: It’s up to 1000 ℃
- The unmatched bending strength: It’s far cry higher than technical ceramic substrate up to 800 MPa
- Highest fracture toughness: The value is to 6 ~ 8 MPa.m 1/2, It is much higher than other ceramic substrates
- Ideal thermal expansivity to Si chip: It is the closest to silicon chips, around 3.2 x 10-6 /K
The specification of Silicon Nitride Substrate
| Item | Test Standard | Unit | Typical Value |
Dimensional
| Thickness | mm | 0.32/0.50/1.0/2.0 | |
| Outline size | mm | Max. 138 * 190mm | |
| Flatness | mm | ≤0.05 mm/100 mm |
Physical properties
| Density | g/cm3 | ASTMB962 | 3.2 ~ 3.3 |
| Color | Naked eyes | Gray, Black | |
| Roughness | Micro (μm) | ISO4287 | ≦0.40 |
Electrical properties
| Dielectric constant | (E) | IEC 60250 | 7.5~8.5 |
| Dielectric loss | IEC 60250 | ＜0.001 | |
| Breakdown strength | Kv/mm | IEC 60672 | ≧15 |
The Typical Application of Si3N4 Substrate
- New energy vehicle electronic control system, such as IGBT
- High-speed rail/aerospace power module, for example train converters, aircraft engine control systems
- 5G/6G high-frequency communication devices, e.g Millimeter-wave frequency band (28GHz+)
- Photovoltaic/wind power inverters
- Heat dissipation substrate for industrial lasers, such as high power laser, High-temperature sensor carrier.
- Thermal management: Although the thermal conductivity of silicon nitride (~90 W/mK) is lower than that of aluminum nitride (~180 W/mK), its thermal shock resistance and mechanical strength (bending strength >800 MPa) far exceed other materials.
- Reliability: The fracture toughness is more than three times that of aluminum nitride, and it is not easy to crack during repeated thermal cycles, and has a longer lifespan.
- Cost: In the common case, aluminum nitride substrate is lower than silicon nitride ones, but they suits different applications.
Yes, we support trial batch samples with sample charge. If the thickness and outline dimensions are standard, the regular MOQ is 10pcs; Otherwise, it needs to be consulted.
The core evaluation dimensions should include the following aspects:
- Technical capabilities: manufacturing, quality assurance, management
- Lead time: Shortest guaranteed delivery time and quick response to urgent orders
- Service capability: technical support, after-sales service and sustainability
To ensure the raw material of the substrate comply with RoHS, REACH and EU directives.
- Short-term temperature resistance: It can withstand up to 1800°C in an inert environment,
- The long-term use temperature in the air or oxidizing conditions is ≤1400°C
- To optimize higher thermal conductivity via doping with sintering aids, the target value is over than 100 W/k.M.
- Integration: Develop embedded circuit substrates
- Low cost: Promote pressureless sintering technology to reduce energy consumption by more than 30%.