Core Properties
Thermal Properties:
Silicon carbide thermal Conductivity: 120-150 W/(m·K);
Coefficient of Thermal Expansion: 3.7-4.4×10⁻⁶/K;
Thermal Shock Resistance: Withstands rapid cooling and heating cycles from 1650°C to room temperature.
Mechanical Properties:
Hardness: >2800 HV (second only to diamond);
Flexural Strength: >462 MPa (room temperature), slow decay at high temperatures.
Chemical Stability:
Resistant to strong acids (except hydrofluoric acid), strong alkalis, and molten metals.
Customized Service for Silicon Carbide Plates
Jinghui Ceramics’ silicon carbide ceramic plates are made from high-purity SiC raw materials through reaction bonded
silicon carbide (RBSiC) or direct sintered silicon darbide （SSiC). They combine exceptional high-temperature stability, ultra-high hardness, and excellent wear resistance. They are suitable for high-end industrial sectors such as semiconductors, aerospace, and energy. Due to their outstanding semiconductor properties and high-temperature corrosion resistance, silicon carbide ceramic plates are increasingly used in power devices and high-temperature structural components. We can provide customized solutions with specific dimensions and performance.
Product By Features
Silicon carbide plate are used in many industrial fields due to their high thermal conductivity, electrical insulation, high temperature resistance and chemical stability.Jinghui ceramic can supply silicon carbide plate in sizes up to 450mm x 450mm, with thicknesses ranging from 0.5mm – 10mm thick.
Advantages and Applications
Compared with other ceramic materials, silicon carbide has its outstanding advantages and disadvantages.
Known for their high mechanical strength and thermal stability.
Combining the benefits of high strength with versatile applications.
The service life is 5-10 times that of alumina ceramics.
Complex shapes require diamond tools.
Excellent thermal shock resistance 300℃.
High temperature strength retention rate>80% (1300℃).
Provides lightweight, high-strength protection in military and personal armor applications.
Used in high-temperature environments for enhanced durability and thermal performance.
Product Variants
We provide two kinds of silicon carbide plates made by different processes. The performance comparison is as follows:
| parameter | Reaction Bonded Silicon Carbide | Direct Sintered Silicon Carbide |
| (RBSiC) | （SSiC） | |
| Density | >3.10 g/cm³ | >3.13 g/cm³ |
| Porosity | <0.5% | <0.1% |
| Surface roughness Ra | ≤0.8 μm | ≤0.4 μm |
| Maximum size | 450×450 mm | 400×400 mm |
| Customized precision | ±0.1 mm | ±0.05 mm |
No. Silicon carbide forms a dense SiO₂ protective layer (approximately 5-10μm) on its surface in a high-temperature oxidizing environment, preventing further oxidation. We optimize the stability of this oxide layer by adding dopants, ensuring a strength retention of >85% after long-term use in air at 1300°C.
Silicon carbide is far superior to aluminum oxide in terms of hardness, wear resistance (increased 5-10 times), thermal conductivity and high-temperature strength (strength attenuation <20% at 1600°C), and is suitable for high-temperature semiconductor processes.
Yes. Jinghui Ceramics can provide large-sized thin-walled panels with a controlled deformation rate of less than 0.1% (the industry average is >0.5%). For large and thin panels, ribbed support can be considered. We also have partners who can provide relevant technical support.